| Parameters | |
|---|---|
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 1A, 10V |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 262pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Rise Time | 5.4ns |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 1.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.25Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 1 week ago) |
| Height | 900μm |
| Length | 2.9mm |
| Width | 1.6mm |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2010 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 5.1 ns |