| Parameters | |
|---|---|
| Package / Case | Module |
| Surface Mount | NO |
| Number of Pins | 21 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2010 |
| Series | IGBTMOD™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 9 |
| Max Power Dissipation | 5.9kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 9 |
| JESD-30 Code | R-XUFM-X9 |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Case Connection | ISOLATED |
| Power - Max | 5900W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.5V |
| Max Collector Current | 900A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 140nF |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 900A |
| NTC Thermistor | No |
| Input Capacitance (Cies) @ Vce | 140nF @ 10V |
| RoHS Status | RoHS Compliant |