| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 11 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2009 |
| Series | IGBTMOD™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 11 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 1.25kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Reach Compliance Code | unknown |
| Pin Count | 11 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Case Connection | ISOLATED |
| Power - Max | 1250W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.6V |
| Max Collector Current | 200A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 35nF |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 200A |
| NTC Thermistor | Yes |
| Input Capacitance (Cies) @ Vce | 35nF @ 10V |
| RoHS Status | RoHS Compliant |