| Parameters | |
|---|---|
| Package / Case | Module |
| Number of Pins | 11 |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2012 |
| Series | IGBTMOD™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.15kW |
| Reach Compliance Code | unknown |
| Number of Elements | 1 |
| Configuration | Half Bridge |
| Power - Max | 1150W |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.25V |
| Max Collector Current | 150A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 15nF |
| Max Breakdown Voltage | 1.2kV |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 150A |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 15nF @ 10V |
| RoHS Status | RoHS Compliant |