BYG10M-E3/TR3
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | FREE WHEELING DIODE |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BYG10M |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Avalanche |
| Current - Reverse Leakage @ Vr | 1μA @ 1000V |
| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 1.5A |
| Forward Current | 1.5A |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 30A |
| Application | GENERAL PURPOSE |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Forward Voltage | 1.15V |
| Max Reverse Voltage (DC) | 1kV |
| Average Rectified Current | 1.5A |
| Number of Phases | 1 |
| Reverse Recovery Time | 4 μs |
| Peak Reverse Current | 1μA |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV |
| Peak Non-Repetitive Surge Current | 30A |
| Reverse Voltage | 1kV |
| Max Forward Surge Current (Ifsm) | 30A |
| Recovery Time | 4 μs |
| Height | 2.09mm |
| Length | 4.5mm |
| Width | 2.79mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet