BUTW92
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 250V |
| Max Power Dissipation | 180W |
| Current Rating | 15A |
| Base Part Number | BUTW92 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 180W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 250V |
| Max Collector Current | 45A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 9 @ 60A 3V |
| Current - Collector Cutoff (Max) | 50μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 15A, 60A |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Base Voltage (VCBO) | 500V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 9 |
| VCEsat-Max | 1 V |
| Height | 20.3mm |
| Length | 15.9mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet