| Parameters | |
|---|---|
| Current Rating | 7A |
| Base Part Number | BUT70 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 125V |
| Max Collector Current | 32A |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 7A, 70A |
| Collector Emitter Breakdown Voltage | 125V |
| Collector Emitter Saturation Voltage | 900mV |
| Collector Base Voltage (VCBO) | 200V |
| Emitter Base Voltage (VEBO) | 7V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 125V |
| Max Power Dissipation | 200W |