BULB49DT4
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 80W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BULB49 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 80W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 450V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4 @ 7A 10V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 800mA, 4A |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Base Voltage (VCBO) | 850V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 10 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet