BUK9Y14-40B,115
| Parameters | |
|---|---|
| Gate to Source Voltage (Vgs) | 15V |
| Max Dual Supply Voltage | 40V |
| Drain-source On Resistance-Max | 0.016Ohm |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 226A |
| Avalanche Energy Rating (Eas) | 89 mJ |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Surface Mount | YES |
| Number of Pins | 4 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 85W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 85W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 56A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| Rise Time | 34ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Fall Time (Typ) | 42 ns |
| Turn-Off Delay Time | 68 ns |
| Continuous Drain Current (ID) | 56A |
See Relate Datesheet