BUK9Y12-55B,115

BUK9Y12-55B,115

MOSFET N-CH 55V 61.8A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y12-55B,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 868
  • Description: MOSFET N-CH 55V 61.8A LFPAK (Kg)

Details

Tags

Parameters
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 106W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 106W
Case Connection DRAIN
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 61.8A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 78ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 63 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 61.8A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 55V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
See Relate Datesheet

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