| Parameters | |
|---|---|
| Vgs (Max) | ±10V | 
| Fall Time (Typ) | 68 ns | 
| Turn-Off Delay Time | 64 ns | 
| Continuous Drain Current (ID) | 12A | 
| Gate to Source Voltage (Vgs) | 10V | 
| Max Dual Supply Voltage | 55V | 
| Drain-source On Resistance-Max | 0.036Ohm | 
| Avalanche Energy Rating (Eas) | 100 mJ | 
| RoHS Status | ROHS3 Compliant | 
| Factory Lead Time | 16 Weeks | 
| Contact Plating | Tin | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-261-4, TO-261AA | 
| Surface Mount | YES | 
| Number of Pins | 4 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2010 | 
| Series | TrenchMOS™ | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 4 | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 
| Pin Count | 4 | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Power Dissipation-Max | 8W Tc | 
| Operating Mode | ENHANCEMENT MODE | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 14 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 29m Ω @ 8A, 10V | 
| Vgs(th) (Max) @ Id | 2V @ 1mA | 
| Input Capacitance (Ciss) (Max) @ Vds | 1594pF @ 25V | 
| Current - Continuous Drain (Id) @ 25°C | 12A Tc | 
| Rise Time | 125ns | 
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |