| Parameters | |
|---|---|
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 8W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 173m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 619pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A Tc |
| Rise Time | 89ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 4.6A |
| Gate to Source Voltage (Vgs) | 10V |
| Max Dual Supply Voltage | 100V |
| Drain to Source Breakdown Voltage | 100V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.8mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | TIN |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |