BUK965R8-100E,118
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 357W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 357W |
| Case Connection | DRAIN |
| Turn On Delay Time | 81 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.8m Ω @ 25A, 5V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 17460pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 133nC @ 5V |
| Rise Time | 168ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 148 ns |
| Turn-Off Delay Time | 237 ns |
| Continuous Drain Current (ID) | 120A |
| Gate to Source Voltage (Vgs) | 10V |
| Max Dual Supply Voltage | 100V |
| Drain-source On Resistance-Max | 0.0058Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 597A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet