 
    | Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks | 
| Contact Plating | Tin | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 
| Surface Mount | YES | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~175°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2011 | 
| Series | Automotive, AEC-Q101, TrenchMOS™ | 
| JESD-609 Code | e3 | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 2 | 
| ECCN Code | EAR99 | 
| Additional Feature | LOGIC LEVEL COMPATIBLE | 
| HTS Code | 8541.29.00.75 | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Form | GULL WING | 
| Pin Count | 3 | 
| JESD-30 Code | R-PSSO-G2 | 
| Number of Elements | 1 | 
| Power Dissipation-Max | 157W Tc | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 157W | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 30 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 27m Ω @ 25A, 10V | 
| Vgs(th) (Max) @ Id | 2V @ 1mA | 
| Input Capacitance (Ciss) (Max) @ Vds | 4360pF @ 25V | 
| Current - Continuous Drain (Id) @ 25°C | 46A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 5V | 
| Rise Time | 86ns | 
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V | 
| Vgs (Max) | ±15V | 
| Fall Time (Typ) | 46 ns | 
| Turn-Off Delay Time | 96 ns | 
| Continuous Drain Current (ID) | 46A | 
| Gate to Source Voltage (Vgs) | 15V | 
| Max Dual Supply Voltage | 100V | 
| Drain to Source Breakdown Voltage | 100V | 
| Pulsed Drain Current-Max (IDM) | 186A | 
| Avalanche Energy Rating (Eas) | 152 mJ | 
| Radiation Hardening | No | 
| RoHS Status | ROHS3 Compliant |