| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Width | 6.35mm |
| Terminal Form | GULL WING |
| Radiation Hardening | No |
| Peak Reflow Temperature (Cel) | 260 |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 114W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 114W |
| Case Connection | DRAIN |
| Turn On Delay Time | 24 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Factory Lead Time | 26 Weeks |
| Rds On (Max) @ Id, Vgs | 24.6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Contact Plating | Tin |
| Input Capacitance (Ciss) (Max) @ Vds | 3120pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 45A Tc |
| Mounting Type | Surface Mount |
| Rise Time | 141ns |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±10V |
| Surface Mount | YES |
| Fall Time (Typ) | 108 ns |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Turn-Off Delay Time | 142 ns |
| Transistor Element Material | SILICON |
| Continuous Drain Current (ID) | 45A |
| Threshold Voltage | 1.5V |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 10V |
| Published | 2011 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Max Dual Supply Voltage | 75V |
| JESD-609 Code | e3 |
| Drain-source On Resistance-Max | 0.029Ohm |
| Drain to Source Breakdown Voltage | 75V |
| Part Status | Active |
| Nominal Vgs | 1.5 V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Height | 6.35mm |
| Number of Terminations | 2 |
| Length | 6.35mm |
| ECCN Code | EAR99 |