BUK7Y18-75B,115

BUK7Y18-75B,115

MOSFET N-CH 75V 49A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK7Y18-75B,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 936
  • Description: MOSFET N-CH 75V 49A LFPAK (Kg)

Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 105W
Case Connection DRAIN
Turn On Delay Time 18.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2173pF @ 25V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 22.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19.8 ns
Turn-Off Delay Time 44.5 ns
Continuous Drain Current (ID) 49A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 105W Tc
See Relate Datesheet

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