| Parameters | |
|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 62W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 62W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1231pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 56A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 14.4 ns |
| Continuous Drain Current (ID) | 56A |
| Gate to Source Voltage (Vgs) | 20V |
| Factory Lead Time | 26 Weeks |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 224A |
| Mount | Surface Mount |
| Avalanche Energy Rating (Eas) | 30.6 mJ |
| Mounting Type | Surface Mount |
| Max Junction Temperature (Tj) | 175°C |
| Height | 900μm |
| Package / Case | SOT-1210, 8-LFPAK33 |
| RoHS Status | ROHS3 Compliant |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |