| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks | 
| Mounting Type | Surface Mount | 
| Package / Case | SOT-1205, 8-LFPAK56 | 
| Surface Mount | YES | 
| Number of Pins | 8 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~175°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2013 | 
| Series | Automotive, AEC-Q101, TrenchMOS™ | 
| JESD-609 Code | e3 | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 6 | 
| Terminal Finish | Tin (Sn) | 
| Additional Feature | AVALANCHE RATED | 
| Max Power Dissipation | 32W | 
| Terminal Form | GULL WING | 
| Pin Count | 8 | 
| Reference Standard | AEC-Q101; IEC-60134 | 
| JESD-30 Code | R-PDSO-G6 | 
| Number of Elements | 2 | 
| Number of Channels | 2 | 
| Element Configuration | Dual | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 32W | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 4.4 ns | 
| FET Type | 2 N-Channel (Dual) | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 25m Ω @ 5A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 1mA | 
| Input Capacitance (Ciss) (Max) @ Vds | 525pF @ 25V | 
| Gate Charge (Qg) (Max) @ Vgs | 7.9nC @ 10V | 
| Rise Time | 4.5ns | 
| Fall Time (Typ) | 5.2 ns | 
| Turn-Off Delay Time | 8.3 ns | 
| Continuous Drain Current (ID) | 27A | 
| Gate to Source Voltage (Vgs) | 20V | 
| Max Dual Supply Voltage | 40V | 
| Drain to Source Breakdown Voltage | 40V | 
| Pulsed Drain Current-Max (IDM) | 107A | 
| Avalanche Energy Rating (Eas) | 10 mJ | 
| FET Technology | METAL-OXIDE SEMICONDUCTOR | 
| FET Feature | Standard | 
| Radiation Hardening | No | 
| RoHS Status | ROHS3 Compliant |