 
    | Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks | 
| Mounting Type | Through Hole | 
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA | 
| Surface Mount | NO | 
| Number of Pins | 3 | 
| Weight | 2.299997g | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~175°C TJ | 
| Packaging | Tube | 
| Published | 2012 | 
| Series | Automotive, AEC-Q101, TrenchMOS™ | 
| JESD-609 Code | e3 | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| Terminal Finish | Tin (Sn) | 
| Additional Feature | AVALANCHE RATED | 
| Technology | MOSFET (Metal Oxide) | 
| Reach Compliance Code | not_compliant | 
| Pin Count | 3 | 
| Number of Elements | 1 | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 234W Tc | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 24 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 3.1m Ω @ 25A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 1mA | 
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 25V | 
| Current - Continuous Drain (Id) @ 25°C | 100A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 10V | 
| Rise Time | 29ns | 
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 
| Vgs (Max) | ±20V | 
| Fall Time (Typ) | 32 ns | 
| Turn-Off Delay Time | 54 ns | 
| Continuous Drain Current (ID) | 100A | 
| Gate to Source Voltage (Vgs) | 20V | 
| Max Dual Supply Voltage | 40V | 
| Drain to Source Breakdown Voltage | 40V | 
| Pulsed Drain Current-Max (IDM) | 798A | 
| RoHS Status | ROHS3 Compliant |