BUK7909-75ATE,127
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 121nC @ 10V |
| Rise Time | 108ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 100 ns |
| Turn-Off Delay Time | 185 ns |
| Continuous Drain Current (ID) | 120A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 75V |
| Drain-source On Resistance-Max | 0.009Ohm |
| Drain to Source Breakdown Voltage | 75V |
| Pulsed Drain Current-Max (IDM) | 480A |
| Avalanche Energy Rating (Eas) | 739 mJ |
| FET Feature | Temperature Sensing Diode |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-220-5 |
| Surface Mount | NO |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 272W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 272W |
| Case Connection | DRAIN |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4700pF @ 25V |
See Relate Datesheet