 
    | Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks | 
| Contact Plating | Tin | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
| Surface Mount | YES | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~175°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2013 | 
| Series | Automotive, AEC-Q101, TrenchMOS™ | 
| JESD-609 Code | e3 | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 2 | 
| ECCN Code | EAR99 | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Form | GULL WING | 
| Pin Count | 3 | 
| JESD-30 Code | R-PSSO-G2 | 
| Number of Elements | 1 | 
| Power Dissipation-Max | 158W Tc | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 167W | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 18 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 14m Ω @ 25A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 1mA | 
| Input Capacitance (Ciss) (Max) @ Vds | 2612pF @ 25V | 
| Current - Continuous Drain (Id) @ 25°C | 70A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V | 
| Rise Time | 114ns | 
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 
| Vgs (Max) | ±20V | 
| Fall Time (Typ) | 45 ns | 
| Turn-Off Delay Time | 52 ns | 
| Continuous Drain Current (ID) | 70A | 
| JEDEC-95 Code | TO-252AA | 
| Gate to Source Voltage (Vgs) | 20V | 
| Max Dual Supply Voltage | 75V | 
| Drain to Source Breakdown Voltage | 75V | 
| Radiation Hardening | No | 
| RoHS Status | ROHS3 Compliant |