BSS83,215
| Parameters | |
|---|---|
| Package / Case | TO-253-4, TO-253AA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated | 10V |
| HTS Code | 8541.21.00.95 |
| Subcategory | FET General Purpose Power |
| Current Rating (Amps) | 50mA |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 125°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SUBSTRATE |
| Transistor Application | SWITCHING |
| Transistor Type | N-Channel |
| Drain Current-Max (Abs) (ID) | 0.05A |
| Drain-source On Resistance-Max | 120Ohm |
| DS Breakdown Voltage-Min | 10V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 0.23W |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet