| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | SIPMOS™ |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 360mW Ta |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 170mA, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 68pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 170mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 7V |
| Rise Time | 2.7ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 0V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 170mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.17A |
| Drain-source On Resistance-Max | 6Ohm |
| DS Breakdown Voltage-Min | 100V |
| FET Feature | Depletion Mode |
| Feedback Cap-Max (Crss) | 7 pF |
| RoHS Status | ROHS3 Compliant |