| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reference Standard | AEC-Q101 |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 2.3 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 190mA, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 13μA |
| Input Capacitance (Ciss) (Max) @ Vds | 20.9pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 190mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 10V |
| Rise Time | 3.2ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 7.4 ns |
| Continuous Drain Current (ID) | 190mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.19A |
| Drain-source On Resistance-Max | 6Ohm |
| DS Breakdown Voltage-Min | 100V |
| Height | 1mm |
| Length | 2.9mm |
| Width | 1.3mm |
| RoHS Status | ROHS3 Compliant |