Parameters | |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.75 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 4 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.5W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.5W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5 Ω @ 340mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 375mA Ta |
Drain to Source Voltage (Vdss) | 240V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 373mA |
Drain-source On Resistance-Max | 7.5Ohm |
Pulsed Drain Current-Max (IDM) | 1.5A |
DS Breakdown Voltage-Min | 240V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 4 Weeks |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
JESD-609 Code | e3 |
Part Status | Active |