| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 5.2A |
| Pin Count | 4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10.8 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 2.6A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 50μA |
| Halogen Free | Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1390pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 28 ns |
| Continuous Drain Current (ID) | 5.2A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 55V |
| Drain to Source Breakdown Voltage | 55V |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |