| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.8W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.1 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 230m Ω @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 218μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 329pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V |
| Rise Time | 6.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 47.3 ns |
| Continuous Drain Current (ID) | 1.8A |
| Threshold Voltage | 1.4V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain-source On Resistance-Max | 0.23Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Max Junction Temperature (Tj) | 150°C |
| Feedback Cap-Max (Crss) | 28 pF |
| Height | 1.7mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PG-SOT223-4 |
| Operating Temperature | -55°C~150°C TJ |