| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.79W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.79W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.2 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 700m Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 400μA |
| Input Capacitance (Ciss) (Max) @ Vds | 364pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
| Rise Time | 7.9ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 21.4 ns |
| Turn-Off Delay Time | 37.4 ns |
| Continuous Drain Current (ID) | 1.1A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.7Ohm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |