BSP295H6327XTSA1
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2001 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 400μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 368pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 9.9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 1.8A |
| Threshold Voltage | 1.1V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.5Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 7.2A |
| Dual Supply Voltage | 60V |
| Nominal Vgs | 1.1 V |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.5mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet