| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.8W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 460μA |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 25ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 87 ns |
| Turn-Off Delay Time | 208 ns |
| Continuous Drain Current (ID) | 1.9A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.3Ohm |
| DS Breakdown Voltage-Min | 60V |
| Feedback Cap-Max (Crss) | 55 pF |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |