BSO613SPVGHUMA1
| Parameters | |
|---|---|
| Threshold Voltage | -3V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | -60V |
| Drain to Source Breakdown Voltage | -60V |
| Height | 1.75mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 26 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PG-SO 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Voltage - Rated DC | -60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -3.44A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 10 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 130m Ω @ 3.44A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Halogen Free | Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 875pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.44A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | -3.44A |
See Relate Datesheet