BSM50GD120DN2G
| Parameters | |
|---|---|
| Mount | Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 21 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Published | 2012 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 39 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | THROUGH-HOLE |
| Pin Count | 39 |
| JESD-30 Code | R-XUFM-T39 |
| Number of Elements | 6 |
| Configuration | Full Bridge |
| Power Dissipation | 400W |
| Case Connection | ISOLATED |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 72A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 78A |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 450 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 33nF @ 25V |
| VCEsat-Max | 3.7 V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet