BSM150GD60DLC
| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 21 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Published | 2012 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 39 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 39 |
| JESD-30 Code | R-XUFM-X39 |
| Number of Elements | 6 |
| Configuration | Single |
| Power Dissipation | 570W |
| Case Connection | ISOLATED |
| Power - Max | 570W |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 180A |
| Current - Collector Cutoff (Max) | 500μA |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.95V |
| Turn On Time | 155 ns |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 150A |
| Turn Off Time-Nom (toff) | 260 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 6.5nF @ 25V |
| VCEsat-Max | 2.45 V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet