BSH103,235
| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 540mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 2.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 400mV @ 1mA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 24V |
| Current - Continuous Drain (Id) @ 25°C | 850mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V |
| Rise Time | 3.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 3.5 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 850mA |
| Gate to Source Voltage (Vgs) | 8V |
| Max Dual Supply Voltage | 30V |
| Drain Current-Max (Abs) (ID) | 0.85A |
| Drain-source On Resistance-Max | 0.5Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet