BSF134N10NJ3GXUMA1

BSF134N10NJ3GXUMA1

N-KANAL POWER MOS


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSF134N10NJ3GXUMA1
  • Package: 3-WDSON
  • Datasheet: PDF
  • Stock: 331
  • Description: N-KANAL POWER MOS (Kg)

Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-MBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 43W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 40μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
Current - Continuous Drain (Id) @ 25°C 9A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 9A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain Current-Max (Abs) (ID) 9A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 26 Weeks
Contact Plating Silver
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-WDSON
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
See Relate Datesheet

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