BSD840NH6327XTSA1
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Max Power Dissipation | 500mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BSD840 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 1.9 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 880mA, 2.5V |
| Vgs(th) (Max) @ Id | 750mV @ 1.6μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 78pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.26nC @ 2.5V |
| Rise Time | 2.2ns |
| Turn-Off Delay Time | 7.8 ns |
| Continuous Drain Current (ID) | 880mA |
| Threshold Voltage | 550mV |
| Gate to Source Voltage (Vgs) | 8V |
| Max Dual Supply Voltage | 20V |
| Drain Current-Max (Abs) (ID) | 3.5A |
| Drain-source On Resistance-Max | 0.4Ohm |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1mm |
| Length | 2mm |
| Width | 1.25mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
See Relate Datesheet