| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 1.2V @ 1.6μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 47pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 950mA 530mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.34nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Continuous Drain Current (ID) | 530mA |
| Gate to Source Voltage (Vgs) | 12V |
| Max Dual Supply Voltage | -20V |
| Drain Current-Max (Abs) (ID) | 0.95A |
| Drain-source On Resistance-Max | 0.35Ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| HTS Code | 8541.21.00.95 |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BSD235 |
| Reference Standard | AEC-Q101 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N and P-Channel |
| Rds On (Max) @ Id, Vgs | 350m Ω @ 950mA, 4.5V |