BSC750N10NDGATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Terminal Form | FLAT |
| Base Part Number | BSC750N10 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 26W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 12μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 4ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 13A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain-source On Resistance-Max | 0.075Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Avalanche Energy Rating (Eas) | 17 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Height | 1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet