BSC0925NDATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 2.5W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN SOURCE |
| Turn On Delay Time | 4.7 ns |
| FET Type | 2 N Channel (Dual Buck Chopper) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1157pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 3.8ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 15A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 11A |
| Drain-source On Resistance-Max | 0.007Ohm |
| Pulsed Drain Current-Max (IDM) | 160A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 14 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet