BSC0911NDATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1W |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN SOURCE |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Rds On (Max) @ Id, Vgs | 3.2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 18A 30A |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Rise Time | 5.4ns |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 30A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet