BSB015N04NX3GXUMA1
| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Contact Plating | Silver |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDSON |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Pin Count | 3 |
| JESD-30 Code | R-MBCC-N3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 89W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.5m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 36A Ta 180A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 142nC @ 10V |
| Rise Time | 6.4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 35A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 40V |
| Drain Current-Max (Abs) (ID) | 180A |
| Drain-source On Resistance-Max | 0.0015Ohm |
| Pulsed Drain Current-Max (IDM) | 400A |
| Avalanche Energy Rating (Eas) | 290 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet