BSB012NE2LX
| Parameters | |
|---|---|
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4900pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 37A Ta 170A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Rise Time | 6ns |
| Drain to Source Voltage (Vdss) | 25V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.6 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 56A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 39A |
| Drain-source On Resistance-Max | 0.0012Ohm |
| Pulsed Drain Current-Max (IDM) | 400A |
| DS Breakdown Voltage-Min | 25V |
| Avalanche Energy Rating (Eas) | 285 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDSON |
| Surface Mount | YES |
| Number of Pins | 7 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Pin Count | 2 |
| JESD-30 Code | R-MBCC-N2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 57W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.7 ns |
See Relate Datesheet