BFP840FESDH6327XTSA1
| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Number of Pins | 4 |
| Transistor Element Material | SILICON GERMANIUM CARBON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 75mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 85GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BFP840 |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Power Dissipation | 75mW |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 2.25V |
| Max Collector Current | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA 1.8V |
| Collector Emitter Breakdown Voltage | 2.6V |
| Gain | 35dB |
| Transition Frequency | 85000MHz |
| Max Breakdown Voltage | 2.6V |
| Collector Base Voltage (VCBO) | 2.9V |
| Emitter Base Voltage (VEBO) | 2.6V |
| Continuous Collector Current | 35mA |
| Noise Figure (dB Typ @ f) | 0.75dB @ 5.5GHz |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet