BFP640FESDH6327XTSA1
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Number of Pins | 4 |
| Transistor Element Material | SILICON GERMANIUM CARBON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BFP640 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 4.1V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA 3V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Gain | 8B ~ 30.5dB |
| Transition Frequency | 46000MHz |
| Frequency - Transition | 46GHz |
| Collector Base Voltage (VCBO) | 4.8V |
| Highest Frequency Band | X B |
| Noise Figure (dB Typ @ f) | 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet