BFL4007
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| HTS Code | 8541.29.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2W Ta 40W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Turn On Delay Time | 27 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 680m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
| Rise Time | 72ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 48 ns |
| Turn-Off Delay Time | 122 ns |
| Continuous Drain Current (ID) | 8.7A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.68Ohm |
| Pulsed Drain Current-Max (IDM) | 49A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 215 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
See Relate Datesheet