| Parameters | |
|---|---|
| Surface Mount | YES |
| Number of Terminals | 4 |
| Transistor Element Material | SILICON |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level (MSL) | 1 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW NOISE |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DUAL GATE, DEPLETION MODE |
| Case Connection | SOURCE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (Abs) (ID) | 0.04A |
| DS Breakdown Voltage-Min | 10V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Power Gain-Min (Gp) | 20dB |
| RoHS Status | RoHS Compliant |