BCR119E6327HTSA1

BCR119E6327HTSA1

TRANS PREBIAS NPN 200MW SOT23-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BCR119E6327HTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 562
  • Description: TRANS PREBIAS NPN 200MW SOT23-3 (Kg)

Details

Tags

Parameters
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 300mV
Frequency - Transition 150MHz
hFE Min 120
Resistor - Base (R1) 4.7 k Ω
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 100mA
Base Part Number BCR119
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
See Relate Datesheet

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