 
    | Parameters | |
|---|---|
| Transistor Element Material | SILICON | 
| Manufacturer Package Identifier | SOT-223-P008 | 
| Operating Temperature | 150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| JESD-609 Code | e3 | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 4 | 
| ECCN Code | EAR99 | 
| Subcategory | Other Transistors | 
| Max Power Dissipation | 1.6W | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | 260 | 
| Time@Peak Reflow Temperature-Max (s) | 30 | 
| Base Part Number | BCP56 | 
| Pin Count | 4 | 
| JESD-30 Code | R-PDSO-G4 | 
| Number of Elements | 1 | 
| Element Configuration | Single | 
| Power Dissipation | 1.6W | 
| Case Connection | COLLECTOR | 
| Transistor Application | SWITCHING | 
| Polarity/Channel Type | NPN | 
| Transistor Type | NPN | 
| Collector Emitter Voltage (VCEO) | 80V | 
| Max Collector Current | 1A | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 2V | 
| Current - Collector Cutoff (Max) | 100nA ICBO | 
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | 
| Collector Emitter Breakdown Voltage | 80V | 
| Transition Frequency | 120MHz | 
| Collector Emitter Saturation Voltage | 500mV | 
| Max Breakdown Voltage | 80V | 
| Collector Base Voltage (VCBO) | 100V | 
| Emitter Base Voltage (VEBO) | 5V | 
| hFE Min | 100 | 
| Max Junction Temperature (Tj) | 150°C | 
| Height | 1.82mm | 
| Length | 6.7mm | 
| Width | 3.7mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free | 
| Factory Lead Time | 8 Weeks | 
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | 
| Contact Plating | Tin | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-261-4, TO-261AA | 
| Number of Pins | 3 |