BC858BT116
| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -100mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | BC85* |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 350mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 650mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | -650mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | -30V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 210 |
| Continuous Collector Current | -100mA |
| Collector-Base Capacitance-Max | 5pF |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet