BC856B-7-F
| Parameters | |
|---|---|
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 220 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| Length | 3.05mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 19 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BC856B |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 310mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -65V |
| Max Collector Current | -100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | -65V |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Current - Collector (Ic) (Max) | 100mA |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | -80V |
See Relate Datesheet